Enhancing the Forward Gate Bias Robustness in p-GaN Gate High-Electron-Mobility Transistors through Doping Profile Engineering

Borga, MatteoMatteoBorgaPosthuma, NielsNielsPosthumaVohra, AnuragAnuragVohraBakeroot, BenoitBenoitBakerootDecoutere, StefaanStefaanDecoutere2025-05-072024-04-262025-05-0720241862-6300WOS:001205653000001https://imec-publications.be/handle/20.500.12860/43882Enhancing the Forward Gate Bias Robustness in p-GaN Gate High-Electron-Mobility Transistors through Doping Profile EngineeringJournal article10.1002/pssa.202400043WOS:001205653000001BREAKDOWNMG