Parasitic side channel formation due to ion implantation isolation of GaN HEMT

Yu, HaoHaoYuPeralagu, UthayasankaranUthayasankaranPeralaguAlian, AlirezaAlirezaAlianZhao, MingMingZhaoParvais, BertrandBertrandParvaisCollaert, NadineNadineCollaert2023-05-162023-01-142023-01-172023-05-162022-12-212731-5894WOS:000898454500001https://imec-publications.be/handle/20.500.12860/40975Parasitic side channel formation due to ion implantation isolation of GaN HEMTJournal article10.1557/s43580-022-00453-6WOS:000898454500001