Ultra thin gate oxides for 0.1µm heterojunction CMOS applications by the use of a sacrificial Si layer

Loo, RogerRogerLooCaymax, MattyMattyCaymaxVerheyen, P.P.VerheyenConard, ThierryThierryConardBender, HugoHugoBenderVandervorst, WilfriedWilfriedVandervorstCollaert, NadineNadineCollaertDe Meyer, KristinKristinDe Meyer2021-10-012021-10-011998https://imec-publications.be/handle/20.500.12860/2741Ultra thin gate oxides for 0.1µm heterojunction CMOS applications by the use of a sacrificial Si layerProceedings paper