Self-aligned ohmic contact scheme to InGaAs using epitaxial Ge growth

Firrincieli, AndreaAndreaFirrincieliVincent, BenjaminBenjaminVincentWaldron, NiamhNiamhWaldronSimoen, EddyEddySimoenClaeys, CorCorClaeysKittl, JorgeJorgeKittl2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/18910Self-aligned ohmic contact scheme to InGaAs using epitaxial Ge growthProceedings paper