Properties of wide bandgap materials as tunnel barriers for spin injection from spin polarised Heuslers into narrow gap semiconductors

Clowes, S.K.S.K.ClowesZhang, T.T.ZhangBranford, W.R.W.R.BranfordBugoslavsky, Y.Y.BugoslavskyCohen, L.F.L.F.CohenVan Roy, WimWimVan Roy2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/8703Properties of wide bandgap materials as tunnel barriers for spin injection from spin polarised Heuslers into narrow gap semiconductorsOral presentation