Marcon, DenisDenisMarconLorenz, AnneAnneLorenzDerluyn, JoffJoffDerluynDas, JoJoDasMertens, RobertRobertMertensGermain, MarianneMarianneGermainBorghs, GustaafGustaafBorghs2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/14120Improved robustness of GaN-on-Si HEMTs under high electric field conditions by etching gate technologyMeeting abstract