Modeling and Analysis of Terminal Capacitances in High-Power Devices: Application to p-GaN Gate HEMTs

Alaei, MojtabaMojtabaAlaeiDePauw, HerbertHerbertDePauwFabris, ElenaElenaFabrisDecoutere, StefaanStefaanDecoutereDoutreloigne, JanJanDoutreloigneLauwaert, JohanJohanLauwaertBakeroot, BenoitBenoitBakeroot2025-08-122025-08-122025-AUG 10018-9383WOS:001542516800001https://imec-publications.be/handle/20.500.12860/46052Modeling and Analysis of Terminal Capacitances in High-Power Devices: Application to p-GaN Gate HEMTsJournal article10.1109/TED.2025.3593216WOS:001542516800001