DC Reliability study of high-k GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers

O'Sullivan, BarryBarryO'SullivanAlian, AliRezaAliRezaAlianSibaja-Hernandez, ArturoArturoSibaja-HernandezFranco, JacopoJacopoFrancoYadav, SachinSachinYadavYu, HaoHaoYuRathi, AartiAartiRathiPeralagu, UthayasankaranUthayasankaranPeralaguVaisman Chasin, AdrianAdrianVaisman ChasinParvais, BertrandBertrandParvaisCollaert, NadineNadineCollaert2024-08-162024-08-162024979-8-3503-6977-91541-7026WOS:001229691100057https://imec-publications.be/handle/20.500.12860/44335DC Reliability study of high-k GaN-on-Si MOS-HEMT's for mm-Wave Power AmplifiersProceedings paper10.1109/IRPS48228.2024.10529379979-8-3503-6976-2WOS:001229691100057RELAXATION