A unified two-band model for oxide traps and interface states in MOS capacitors

Taur, YuanYuanTaurChen, Han-PingHan-PingChenXie, QianQianXieAhn, JaesooJaesooAhnMcIntyre, PaulPaulMcIntyreLin, DennisDennisLinVais, AbhitoshAbhitoshVaisVeskler, DimitriDimitriVeskler2021-10-222021-10-2220150018-9383https://imec-publications.be/handle/20.500.12860/25985A unified two-band model for oxide traps and interface states in MOS capacitorsJournal articlehttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7027192