Contactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectrics

Everaert, Jean-LucJean-LucEveraertRosseel, ErikErikRosseelDekoster, JohanJohanDekosterPap, AronAronPapMaszaros, AlbertAlbertMaszarosKis-Szabo, KrisztianKrisztianKis-SzaboPavelka, TiborTiborPavelka2021-10-182021-10-1820100003-6951https://imec-publications.be/handle/20.500.12860/17085Contactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectricsJournal article