Leakage current and dopant activation characterization of SDE/halo CMOS junctions with non-contact junction photo-voltage metrology

Faifer, V.N.V.N.FaiferSchroder, D.K.D.K.SchroderCurrent, M.I.M.I.CurrentClarysse, TrudoTrudoClarysseTimans, P.J.P.J.TimansZangerle, T.T.ZangerleVandervorst, WilfriedWilfriedVandervorstWong, T.M.H.T.M.H.WongMoussa, AlainAlainMoussaMcCoy, S.S.McCoyGelpey, J.J.GelpeyLerch, W.W.LerchPaul, S.S.PaulBolze, D.D.Bolze2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12146Leakage current and dopant activation characterization of SDE/halo CMOS junctions with non-contact junction photo-voltage metrologyProceedings paper