Leys, FrederikFrederikLeysMitard, JeromeJeromeMitardMartens, KoenKoenMartensPourtois, GeoffreyGeoffreyPourtoisHoussa, MichelMichelHoussaBrunco, D.P.D.P.BruncoKaczer, BenBenKaczerDe Jaeger, BriceBriceDe JaegerLoo, RogerRogerLooMeuris, MarcMarcMeurisCaymax, MattyMattyCaymaxHeyns, MarcMarcHeyns2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/14020Epitaxial strained silicon passivation of the Ge/high-k interface in germanium pMOSFETProceedings paper