Effect of top dielectric morphology and gate material on the performance of nitride-based FLASH memory cells

Cacciato, AntonioAntonioCacciatoBreuil, LaurentLaurentBreuilVan den Bosch, GeertGeertVan den BoschRichard, OlivierOlivierRichardRothschild, AudeAudeRothschildFurnemont, ArnaudArnaudFurnemontBender, HugoHugoBenderKittl, JorgeJorgeKittlVan Houdt, JanJanVan Houdt2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/13470Effect of top dielectric morphology and gate material on the performance of nitride-based FLASH memory cellsProceedings paper