Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaNGaN interface

Meneghini, MatteoMatteoMeneghiniBertin, MarcoMarcoBertinStocco, AntonioAntonioStoccodal Santo, GabrieleGabrieledal SantoMarcon, DenisDenisMarconMalinowski, PawelPawelMalinowskiChini, AlessandroAlessandroChiniMeneghesso, GaudenzioGaudenzioMeneghessoZanoni, EnricoEnricoZanoni2021-10-212021-10-2120130003-6951https://imec-publications.be/handle/20.500.12860/22798Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaNGaN interfaceJournal articlehttp://apl.aip.org/resource/1/applab/v102/i16/p163501_s1