Superior N- and PMOSFET scalability using carbon co-implantation and spike annealing

Augendre, E.E.AugendrePawlak, BartekBartekPawlakKubicek, StefanStefanKubicekHoffmann, ThomasThomasHoffmannChiarella, ThomasThomasChiarellaKerner, ChristophChristophKernerSeveri, SimoneSimoneSeveriFalepin, AnneliesAnneliesFalepinRamos, EmilioEmilioRamosDe Keersgieter, AnAnDe KeersgieterEyben, PierrePierreEybenVanhaeren, DanielleDanielleVanhaerenVandervorst, WilfriedWilfriedVandervorstJurczak, GosiaGosiaJurczakAbsil, PhilippePhilippeAbsilBiesemans, SergeSergeBiesemans2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/11662Superior N- and PMOSFET scalability using carbon co-implantation and spike annealingJournal article