NW-TFET analog performance for different gate oxide thickness and Ge source

Neves Souza, FelipeFelipeNeves SouzaAgopian, Paula G.D.Paula G.D.AgopianMartino, Joao AntonioJoao AntonioMartinoRooyackers, RitaRitaRooyackersVandooren, AnneAnneVandoorenSimoen, EddyEddySimoenThean, AaronAaronTheanClaeys, CorCorClaeys2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24320NW-TFET analog performance for different gate oxide thickness and Ge sourceProceedings paper