Ranjan, R.R.RanjanPey, K.L.K.L.PeyTang, L.J.L.J.TangTung, C.H.C.H.TungGroeseneken, GuidoGuidoGroesenekenRadhakrishnan, M.K.M.K.RadhakrishnanKaczer, BenBenKaczerDegraeve, RobinRobinDegraeveDe Gendt, StefanStefanDe Gendt2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9494A new breakdown failure mechanism in HfO2 gate dielectricsProceedings paper