Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes

Tomomi, TakayamaTakayamaTomomiTaishi, EbisudaniEbisudaniTaishiEiichiro, ShibaShibaEiichiroSepulveda Marquez, AlfonsoAlfonsoSepulveda MarquezBlanquart, TimotheeTimotheeBlanquartKimura, YosukeYosukeKimuraSubramanian, SujithSujithSubramanianBaudot, SylvainSylvainBaudotBriggs, BasoeneBasoeneBriggsGupta, AnshulAnshulGuptaVeloso, AnabelaAnabelaVelosoCapogreco, ElenaElenaCapogrecoMertens, HansHansMertensMeersschaut, JohanJohanMeersschautConard, ThierryThierryConardDara, PraveenPraveenDaraGeypen, JefJefGeypenMartinez Alanis, Gerardo TadeoGerardo TadeoMartinez AlanisBatuk, DmitryDmitryBatukDemuynck, StevenStevenDemuynckMorin, PierrePierreMorin2022-05-102021-11-022022-05-102022-05-1020210734-2101WOS:000649587700001https://imec-publications.be/handle/20.500.12860/37961Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodesJournal article10.1116/6.0000821WOS:000649587700001ATOMIC LAYER DEPOSITIONAMORPHOUS-SILICON NITRIDETHIN-FILMSOXIDATION RESISTANCEPLASMATEMPERATURECHALLENGESMICROSTRUCTUREDIOXIDEDENSITY