Introduction of WO3 layer in a Cu-based Al2O3 conductive bridge RAM system for robust cycling with larger memory window

Woo, JiyongJiyongWooBelmonte, AttilioAttilioBelmonteRedolfi, AugustoAugustoRedolfiHwang, HyunsangHyunsangHwangJurczak, GosiaGosiaJurczakGoux, LudovicLudovicGoux2021-10-232021-10-2320162168-6734https://imec-publications.be/handle/20.500.12860/27596Introduction of WO3 layer in a Cu-based Al2O3 conductive bridge RAM system for robust cycling with larger memory windowJournal articlehttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7400894