Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery

Bastos, JoaoJoaoBastosO'Sullivan, BarryBarryO'SullivanFranco, JacopoJacopoFrancoTyaginov, StanislavStanislavTyaginovTruijen, BrechtBrechtTruijenVaisman Chasin, AdrianAdrianVaisman ChasinDegraeve, RobinRobinDegraeveKaczer, BenBenKaczerRitzenthaler, RomainRomainRitzenthalerCapogreco, ElenaElenaCapogrecoDentoni Litta, EugenioEugenioDentoni LittaSpessot, AlessioAlessioSpessotHigashi, YusukeYusukeHigashiYoon, YounggwangYounggwangYoonMachkaoutsan, VladimirVladimirMachkaoutsanFazan, PierrePierreFazanHoriguchi, NaotoNaotoHoriguchi2023-04-262023-02-272023-04-2620221541-7026WOS:000922926400119https://imec-publications.be/handle/20.500.12860/41151Bias Temperature Instability (BTI) of High-Voltage Devices for Memory PeripheryProceedings paper10.1109/IRPS48227.2022.9764547978-1-6654-7950-9WOS:000922926400119TRAP CREATIONDEGRADATIONINTERFACESILICONIMPACTSIO2