Improvement on CDM ESD robustness of high-voltage tolerant nLDMOS SCR devices by using differential doped gate

Chen, Shih-HungShih-HungChenLinten, DimitriDimitriLintenScholz, MirkoMirkoScholzHellings, GeertGeertHellingsBoschke, RomanRomanBoschkeGroeseneken, GuidoGuidoGroesenekenHuang, S.-H.S.-H.HuangKer, M.-D.M.-D.Ker2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/23633Improvement on CDM ESD robustness of high-voltage tolerant nLDMOS SCR devices by using differential doped gateProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6860651&contentType=Conference+Publications