Influence of field-plate configuration on power dissipation and temperature profiles in AlGaN/GaN on silicon HEMTs

Sodan, ViceViceSodanOprins, HermanHermanOprinsStoffels, SteveSteveStoffelsBaelmans, MartineMartineBaelmansDe Wolf, IngridIngridDe Wolf2021-10-222021-10-222015-080018-9383https://imec-publications.be/handle/20.500.12860/25928Influence of field-plate configuration on power dissipation and temperature profiles in AlGaN/GaN on silicon HEMTsJournal articlehttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7138606&refinements%3D4226708477%26punumber%3D16%26filter%3DAND%28p_I