Extraction of the lateral position of border traps in nanoscale MOSFETs

Illarionov, YuryYuryIllarionovBina, MarkusMarkusBinaTyaginov, StanislavStanislavTyaginovRott, KarinaKarinaRottKaczer, BenBenKaczerReisinger, HansHansReisingerGrasser, TiborTiborGrasser2021-10-222021-10-2220150018-9383https://imec-publications.be/handle/20.500.12860/25412Extraction of the lateral position of border traps in nanoscale MOSFETsJournal articlehttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7194762