A study of electrically active defects created in p-InP by CH4:H2 reactive ion etching

Goubert, L.L.GoubertVan Meirhaeghe, R. L.R. L.Van MeirhaegheClauws, P.P.ClauwsCardon, F.F.CardonVan Daele, PeterPeterVan Daele2021-09-302021-09-301997https://imec-publications.be/handle/20.500.12860/1898A study of electrically active defects created in p-InP by CH4:H2 reactive ion etchingJournal article