High Temperature Influence on the Trade-off between gm/I-D and f(T) of nanosheet NMOS Transistors with Different Metal Gate Stack

Silva, Vanessa C. P.Vanessa C. P.SilvaMartino, Joao A.Joao A.MartinoSimoen, EddyEddySimoenVeloso, AnabelaAnabelaVelosoAgopian, Paula G. D.Paula G. D.Agopian2022-06-162022-05-192022-06-1620212330-5738WOS:000790181800015https://imec-publications.be/handle/20.500.12860/39839High Temperature Influence on the Trade-off between gm/I-D and f(T) of nanosheet NMOS Transistors with Different Metal Gate StackProceedings paper10.1109/EuroSOI-ULIS53016.2021.9560185978-1-6654-3745-5WOS:000790181800015