Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospects of strained SiGe tunneling field-effect transistors

Kao, FrankFrankKaoVerhulst, AnneAnneVerhulstRooyackers, RitaRitaRooyackersDouhard, BastienBastienDouhardDelmotte, JorisJorisDelmotteBender, HugoHugoBenderRichard, OlivierOlivierRichardVandervorst, WilfriedWilfriedVandervorstSimoen, EddyEddySimoenHikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooArstila, KaiKaiArstilaCollaert, NadineNadineCollaertThean, AaronAaronTheanHeyns, MarcMarcHeynsDe Meyer, KristinKristinDe Meyer2021-10-222021-10-2220140021-8979https://imec-publications.be/handle/20.500.12860/24031Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospects of strained SiGe tunneling field-effect transistorsJournal articlehttp://dx.doi.org/10.1063/1.4903288