Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers

Simoen, EddyEddySimoenBrouwers, GijsGijsBrouwersEneman, GeertGeertEnemanBargallo Gonzalez, MireiaMireiaBargallo GonzalezDe Jaeger, BriceBriceDe JaegerMitard, JeromeJeromeMitardBrunco, DavidDavidBruncoSouriau, LaurentLaurentSouriauCody, N.N.CodyThomas, S.S.ThomasMeuris, MarcMarcMeuris2021-10-172021-10-1720081369-8001https://imec-publications.be/handle/20.500.12860/14468Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layersJournal article