Novel junction design for NMOS Si bulk-FinFETs with extension doping by phosphorus doped silicate glass

Sasaki, YuichiroYuichiroSasakiRitzenthaler, RomainRomainRitzenthalerKimura, Y.Y.KimuraDe Roest, DavidDavidDe RoestShi, XiaopingXiaopingShiDe Keersgieter, AnAnDe KeersgieterKim, Min-SooMin-SooKimChew, Soon AikSoon AikChewKubicek, StefanStefanKubicekSchram, TomTomSchramKikuchi, YoshiakiYoshiakiKikuchiDemuynck, StevenStevenDemuynckVeloso, AnabelaAnabelaVelosoVandervorst, WilfriedWilfriedVandervorstHoriguchi, NaotoNaotoHoriguchiMocuta, DanDanMocutaMocuta, AndaAndaMocutaThean, AaronAaronThean2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/25865Novel junction design for NMOS Si bulk-FinFETs with extension doping by phosphorus doped silicate glassMeeting abstract