Class 3 HBM and class C MM ESD protected 5.5 GHz LNA in 90 nm RF CMOS using above-IC inductors

Thijs, StevenStevenThijsLinten, DimitriDimitriLintenMahadeva Iyer, NatarajanNatarajanMahadeva IyerJeamsaksiri,JeamsaksiriMercha, AbdelkarimAbdelkarimMerchaRamos, JavierJavierRamosSun, XiaoXiaoSunCarchon, GeertGeertCarchonSoussan, PhilippePhilippeSoussanWambacq, PietPietWambacqDecoutere, StefaanStefaanDecoutereGroeseneken, GuidoGuidoGroeseneken2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/11306Class 3 HBM and class C MM ESD protected 5.5 GHz LNA in 90 nm RF CMOS using above-IC inductorsProceedings paper