Low-Temperature Dechlorosilylation Chemistry for Area-Selective Deposition of Ge2Sb2Te5 and Its Mechanism in Nanopatterns

Sinha, JyotiJyotiSinhaGallis, LeonidasLeonidasGallisClerix, Jan-WillemJan-WillemClerixvan der Veen, MarleenMarleenvan der VeenInnocent, JeromeJeromeInnocentIlliberi, AndreaAndreaIlliberiGivens, MichaelMichaelGivensNyns, LauraLauraNynsDelabie, AnneliesAnneliesDelabie2024-09-252024-06-232024-09-2520240897-4756WOS:001245134000001https://imec-publications.be/handle/20.500.12860/44073Low-Temperature Dechlorosilylation Chemistry for Area-Selective Deposition of Ge2Sb2Te5 and Its Mechanism in NanopatternsJournal article10.1021/acs.chemmater.4c00286WOS:001245134000001ATOMIC LAYER DEPOSITIONPHASE-CHANGE MEMORYTHIN-FILMSGROWTHNANOPARTICLESNUCLEATIONRUTHENIUMIMPACTGETE