Cryogenic cooling post MgO promoting the free layer coercivity and TMR in perpendicular bottom pinned Co/Ni STT-MRAM device stacks

Swerts, JohanJohanSwertsMertens, SofieSofieMertensCouet, SebastienSebastienCouetLin, TsannTsannLinLiu, EnlongEnlongLiuRao, SiddharthSiddharthRaoKim, WoojinWoojinKimVan Elshocht, SvenSvenVan ElshochtKar, Gouri SankarGouri SankarKarFurnemont, ArnaudArnaudFurnemontNishimura, KazumasaKazumasaNishimuraOkuyama, HirokiHirokiOkuyamaSeino, TakuyaTakuyaSeinoTsunekawa, KojiKojiTsunekawa2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27370Cryogenic cooling post MgO promoting the free layer coercivity and TMR in perpendicular bottom pinned Co/Ni STT-MRAM device stacksMeeting abstract