High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy

Cheng, KaiKaiChengLeys, MaartenMaartenLeysDegroote, StefanStefanDegrooteGermain, MarianneMarianneGermainBorghs, GustaafGustaafBorghs2021-10-172021-10-1720080003-6951https://imec-publications.be/handle/20.500.12860/13506High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxyJournal article