Marial characterization of Ge1-xSnx alloys for strained Ge CMOS devices

Takeuchi, ShotaroShotaroTakeuchiShimura, YosukeYosukeShimuraNishimura, TTNishimuraVincent, BenjaminBenjaminVincentEneman, GeertGeertEnemanClarysse, TrudoTrudoClarysseDemeulemeester, JelleJelleDemeulemeesterTemst, KristiaanKristiaanTemstVantomme, AndreAndreVantommeDekoster, JohanJohanDekosterCaymax, MattyMattyCaymaxLoo, RogerRogerLooNakatsuka, OsamuOsamuNakatsukaZaima, ShigeakiShigeakiZaima2021-10-182021-10-182010-10https://imec-publications.be/handle/20.500.12860/18064Marial characterization of Ge1-xSnx alloys for strained Ge CMOS devicesProceedings paper