Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance

Posthuma, NielsNielsPosthumaYou, ShuzhenShuzhenYouLiang, HuHuLiangRonchi, NicoloNicoloRonchiKang, XuanwuXuanwuKangWellekens, DirkDirkWellekensSaripalli, YogaYogaSaripalliDecoutere, StefaanStefaanDecoutere2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27167Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performanceProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7520786