On the complementary role of the field and temperature in triggering the on/off switching mechanisms in Hf/HfO2-x resistive RAM cells

Govoreanu, BogdanBogdanGovoreanuClima, SergiuSergiuClimaRadu, IulianaIulianaRaduChen, YangyinYangyinChenWouters, DirkDirkWoutersAltimime, LaithLaithAltimimeJurczak, GosiaGosiaJurczak2021-10-212021-10-2120130018-9383https://imec-publications.be/handle/20.500.12860/22424On the complementary role of the field and temperature in triggering the on/off switching mechanisms in Hf/HfO2-x resistive RAM cellsJournal articlehttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6542711&sortType%3Dasc_p_Sequence%26filter%3DAND%28p_IS_Number%3A6564