Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiNbipolar RRAM achieved through understanding-based stack-engineering

Goux, LudovicLudovicGouxFantini, AndreaAndreaFantiniKar, Gouri SankarGouri SankarKarChen, YangyinYangyinChenJossart, NicoNicoJossartDegraeve, RobinRobinDegraeveClima, SergiuSergiuClimaGovoreanu, BogdanBogdanGovoreanuLorenzo, G.G.LorenzoPourtois, GeoffreyGeoffreyPourtoisWouters, DirkDirkWoutersKittl, JorgeJorgeKittlAltimime, LaithLaithAltimimeJurczak, GosiaGosiaJurczak2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/20742Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiNbipolar RRAM achieved through understanding-based stack-engineeringProceedings paper