A new technique to fabricate Ultra-Shallow-Junctions, combining in-situ vapour HCl etching and in-situ doped epitaxial SiGe re-growth

Loo, RogerRogerLooCaymax, MattyMattyCaymaxMeunier-Beillard, PhilippePhilippeMeunier-BeillardPeytier, IvanIvanPeytierHolsteyns, FrankFrankHolsteynsKubicek, StefanStefanKubicekVerheyen, PeterPeterVerheyenLindsay, RichardRichardLindsayRichard, OlivierOlivierRichard2021-10-152021-10-152003-01https://imec-publications.be/handle/20.500.12860/7818A new technique to fabricate Ultra-Shallow-Junctions, combining in-situ vapour HCl etching and in-situ doped epitaxial SiGe re-growthMeeting abstract