Treshold voltage modulation in FINFET devices through arsenic ion implantation into TiN/HfSiON gate stack

Witters, LiesbethLiesbethWittersSon, Nak JinNak JinSonFerain, IsabelleIsabelleFerainSan, TamerTamerSanSinganamalla, RaghunathRaghunathSinganamallaKerner, ChristophChristophKernerCollaert, NadineNadineCollaertDe Meyer, KristinKristinDe MeyerJurczak, GosiaGosiaJurczak2021-10-162021-10-162007-10https://imec-publications.be/handle/20.500.12860/13230Treshold voltage modulation in FINFET devices through arsenic ion implantation into TiN/HfSiON gate stackProceedings paper