EOT-scaling by interface layer scavenging and HfO2 $j-value increase in high-k/metal gate CMOS devices: trade-offs and perspectives

Ragnarsson, Lars-AkeLars-AkeRagnarsson2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24414EOT-scaling by interface layer scavenging and HfO2 $j-value increase in high-k/metal gate CMOS devices: trade-offs and perspectivesOral presentation