45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment

Mitsuhashi, RiichirouRiichirouMitsuhashiYamamoto, KazuhikoKazuhikoYamamotoHayashi, S.S.HayashiRothschild, AudeAudeRothschildKubicek, StefanStefanKubicekVeloso, AnabelaAnabelaVelosoVan Elshocht, SvenSvenVan ElshochtJurczak, GosiaGosiaJurczakDe Gendt, StefanStefanDe GendtBiesemans, SergeSergeBiesemansNiwa, M.M.Niwa2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/1089245nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatmentJournal article