Identification of critical regions in AlGaN/GaN-on-Si Schottky barrier diode using Electron beam induced current method

Priesol, JurajJurajPriesolSatka, AlexanderAlexanderSatkaChvala, A.A.ChvalaStoffels, SteveSteveStoffelsDecoutere, StefaanStefaanDecoutere2021-10-242021-10-242017-05https://imec-publications.be/handle/20.500.12860/29221Identification of critical regions in AlGaN/GaN-on-Si Schottky barrier diode using Electron beam induced current methodProceedings paper