High Density 360 /μm Aligned CNT FET with ION>1 mA/μm at -0.5 V VD and 30nm Lch

Wu, XiangyuXiangyuWuTimmermans, MarinaMarinaTimmermansLiu, LijunLijunLiuXi, FengbenFengbenXiSharma, HimanshuHimanshuSharmaLin, ZaoyangZaoyangLinCott, DaireDaireCottMana, LucaLucaManaNuytten, ThomasThomasNuyttende Marneffe, Jean-FrancoisJean-Francoisde MarneffeHan, HanHanHanBrems, StevenStevenBremsGoux, LudovicLudovicGouxLockhart de la Rosa, Cesar JavierCesar JavierLockhart de la RosaLin, DennisDennisLinKar, Gouri SankarGouri SankarKar2025-04-102025-02-022025-04-102024979-8-3503-8814-51930-8833WOS:001349548800035https://imec-publications.be/handle/20.500.12860/45159High Density 360 /μm Aligned CNT FET with ION>1 mA/μm at -0.5 V VD and 30nm LchProceedings paper10.1109/ESSERC62670.2024.10719532979-8-3503-8813-8WOS:001349548800035ARRAYS