Impact of oxide trap passivation by fluorine on the low-frequency noise behavior of gate-last pMOSFETs

Simoen, EddyEddySimoenVeloso, AnabelaAnabelaVelosoHoriguchi, NaotoNaotoHoriguchiParaschiv, VasileVasileParaschivClaeys, CorCorClaeys2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/23092Impact of oxide trap passivation by fluorine on the low-frequency noise behavior of gate-last pMOSFETsProceedings paper