Deducing the apparent flat-band position Vafb and the doping level of large area single layer graphene MOS capacitors

Lin, DennisDennisLinAsselberghs, IngeIngeAsselberghsVais, AbhitoshAbhitoshVaisArutchelvan, G.G.ArutchelvanDelabie, AnneliesAnneliesDelabieHeyns, MarcMarcHeynsMocuta, AndaAndaMocutaRadu, IulianaIulianaRaduThean, AaronAaronThean2021-10-222021-10-2220150167-9317https://imec-publications.be/handle/20.500.12860/25564Deducing the apparent flat-band position Vafb and the doping level of large area single layer graphene MOS capacitorsJournal articlehttp://www.sciencedirect.com/science/article/pii/S0167931715003512