Kumar, NitishNitishKumarSankatali, VenkateswarluVenkateswarluSankataliGupta, AnkurAnkurGuptaSingh, PushpaprajPushpaprajSingh2026-06-082026-06-0820251530-4388https://imec-publications.be/handle/20.500.12860/59634Nowadays, electro-thermal transport behavior analyzing is important in emerging nanoscale devices because thermal management is a critical issue in improving the device’s performance and cooling strategies. In this article, a comparative study for electro-thermal performance analysis of junctionless and an inversion-mode nanowire gate-all-around (GAA) field-effect transistors (FETs) is presented in advanced technology nodes by considering nonlocal effects. The junctionless device showed ~15.2% better thermal reliability and ~26.7%/37.6% better HCI/BTI lifetime compared to the inversion-mode device. The transient behavior of electro-thermal reliability is also investigated for both devices, where the devices turn on for a short time within a duty cycle, the devices showed better thermal reliability and ~52.8%/68.2% HCI/BTI lifetime improvement. This study also provides strategies for thermal management in advanced node devices.engJournal article10.1109/tdmr.2025.3570616WOS:001572797400039PIEZORESISTIVE SENSING PERFORMANCETHERMAL-CONDUCTIVITYRESISTANCENODE