Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate

Millesimo, M.M.MillesimoFiegna, C.C.FiegnaBakeroot, BenoitBenoitBakerootBorga, MatteoMatteoBorgaPosthuma, NielsNielsPosthumaDecoutere, StefaanStefaanDecoutereSangiorgi, E.E.SangiorgiTallarico, A. N.A. N.Tallarico2024-11-252024-08-162024-11-252024979-8-3503-6977-91541-7026WOS:001229691100071https://imec-publications.be/handle/20.500.12860/44313Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN GateProceedings paper10.1109/IRPS48228.2024.10529393979-8-3503-6976-2WOS:001229691100071NOISERELIABILITYPOWER