Negative bias temperature instabilities in SiO2/HfO2-based hole channel FETs

Houssa, MichelMichelHoussaDe Gendt, StefanStefanDe GendtGroeseneken, GuidoGuidoGroesenekenHeyns, MarcMarcHeyns2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9064Negative bias temperature instabilities in SiO2/HfO2-based hole channel FETsJournal article