Using adaptive resurf technique and field plate working to improve the safe operating area of n-type drain extended MOS transistors

Bakeroot, BenoitBenoitBakerootMoens, P.P.MoensVermandel, MiguelMiguelVermandelDoutreloigne, JanJanDoutreloigne2021-10-142021-10-142001https://imec-publications.be/handle/20.500.12860/5033Using adaptive resurf technique and field plate working to improve the safe operating area of n-type drain extended MOS transistorsProceedings paper