BTI Reliability of InGaAs nMOS gate-stack: on the impact of shallow and deep defect bands on the operating voltage range of III-V technology

Putcha, VamsiVamsiPutchaFranco, JacopoJacopoFrancoVais, AbhitoshAbhitoshVaisSioncke, SonjaSonjaSionckeKaczer, BenBenKaczerXie, QiQiXieCalka, PaulinePaulineCalkaTang, FuFuTangJiang, XiaoqiangXiaoqiangJiangGivens, MichaelMichaelGivensCollaert, NadineNadineCollaertLinten, DimitriDimitriLintenGroeseneken, GuidoGuidoGroeseneken2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/29233BTI Reliability of InGaAs nMOS gate-stack: on the impact of shallow and deep defect bands on the operating voltage range of III-V technologyProceedings paper