Odnoblyudov, V.V.OdnoblyudovBasceri, C.C.BasceriKurth, C.C.KurthYamada, M.M.YamadaKonishi, S.S.KonishiKawahara, M.M.KawaharaLiao, C. -C.C. -C.LiaoShen, S.S.ShenChiu, J.J.ChiuGeens, KarenKarenGeensVohra, AnuragAnuragVohraBakeroot, BenoitBenoitBakerootDecoutere, StefaanStefaanDecoutereHahn, H.H.HahnHeuken, M.M.Heuken2026-04-212026-04-2120242380-9248https://imec-publications.be/handle/20.500.12860/59144The SEMI standard thickness, CMOS fab-friendly and large diameter QST® (QROMIS Substrate Technology) substrates enable manufacturing of commercial high-performance GaN power devices with breakdown voltages ranging from 100V to 2000V and beyond. This is achieved by utilizing a polycrystalline ceramic substrate core with the coefficient of thermal expansion (CTE) matched to GaN over a wide temperature range. In this work, the status of 200mm and 300mm commercial QST® substrates and GaN-on-QST® epi-wafers will be discussed. The production status of 650V GaN-on-QST® E-mode HEMT devices on a commercial, high volume 200mm CMOS foundry manufacturing platform is presented. Also, the results of the development work in 200mm CMOS fabs on high-quality 1,200V E-mode HEMTs are included.engProceedings paper10.1109/iedm50854.2024.10873423WOS:001692734400105